BFP410 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• Low current device suitable e.g. for handhelds
• For high frequency oscillators e.g. DRO for LNB
• For ISM band applications like
Automatic Meter Reading, Sensors etc.
• Transit frequency f_T = 25 GHz
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BFP410
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP410
Marking
Pin Configuration
AKs
1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 100 °C
Junction temperature
T_J
Ambient temperature
T_A
Storage temperature
T_Stg
1_{TS is measured on the emitter lead at the soldering point to the pcb}
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
4.5
4.1
13
13
1.5
40
6
150
150
-55 ... 150
-55 ... 150
Value
335
Unit
V
mA
mW
°C
Unit
K/W
2010-04-09
1