BC857BE6327 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – PNP Silicon AF Transistor

BC857...-BC860...
Transition frequency f_T = ƒ(I_C)
V_CE = 5 V
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
10 ³
MHz
f_{T 5}
EHP00378
10 ²
5
10 ¹
10 ^-1
5 10 ⁰
5 10¹
mA 10 ²
Ι_C
Total power dissipation P_tot = ƒ(T_S)
BC856-BC860
12
pF
10
9
8
7
6
5
4
CEB
3
2
1
CCB
0
0
4
8
12
16 V 22
V_CB(V_EB
Total power dissipation P_tot = ƒ(T_S)
BC857BL3
360
mW
300
270
240
210
180
150
120
90
60
30
0
0 15 30 45 60 75 90 105 120 _°C 150
T_S
300
mW
250
225
200
175
150
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120 °C 150
T_S
6
2011-09-19