BC857BE6327 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – PNP Silicon AF Transistor

BC857...-BC860...
Maximum Ratings
Parameter
Collector-emitter voltage
BC857..., BC860...
BC858..., BC859...
Symbol
V_CEO
Value
45
30
Collector-base voltage
BC857..., BC860...
BC858..., BC859...
Emitter-base voltage
Collector current
Peak collector current, t_p ≤ 10 ms
Total power dissipation
T_S ≤ 71 °C, BC857-BC860
T_S ≤ 135 °C, BC857BL3
T_S ≤ 124 °C, BC857W-BC860W
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point¹⁾
BC857-BC860
BC857BL3
BC857W-BC860W
V_CBO
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
Symbol
R_thJS
50
30
5
100
200
330
250
250
150
-65 ... 150
Value
≤ 240
≤ 60
≤ 105
1_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
mA
mW
°C
Unit
K/W
2
2011-09-19