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BC857BE6327 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – PNP Silicon AF Transistor
◁
BC857...-BC860...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC857..., BC860...
IC = 10 mA, IB = 0 , BC858..., BC859...
V(BR)CEO
45
-
30
-
V
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC857..., BC860...
IC = 10 µA, IE = 0 , BC858..., BC859...
V(BR)CBO
50
-
-
30
-
-
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain1)
IC = 10 µA, VCE = 5 V, hFE-grp.A
IC = 10 µA, VCE = 5 V, hFE-grp.B
IC = 10 µA, VCE = 5 V, hFE-grp.C
IC = 2 mA, VCE = 5 V, hFE-grp.A
IC = 2 mA, VCE = 5 V, hFE-grp.B
IC = 2 mA, VCE = 5 V, hFE-grp.C
V(BR)EBO 5
-
-
ICBO
hFE
µA
-
- 0.015
-
-
5
-
- 140 -
- 250 -
- 480 -
125 180 250
220 290 475
420 520 800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VCEsat
mV
-
75 300
- 250 650
VBEsat
-
700
-
-
850
-
VBE(ON)
600 650 750
-
- 820
1Pulse test: t < 300µs; D < 2%
3
2011-09-19
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