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| BC857BE6327 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – PNP Silicon AF Transistor | |||
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BC857...-BC860...
DC current gain hFE = Æ(IC)
VCE = 1 V
10 3
h FE 5 100 C
25 C
102 -50C
5
EHP00382
Collector-emitter saturation voltage
IC = Æ(VCEsat), hFE = 20
10 2
mA
ÎC
10 1
5
EHP00380
100 C
25 C
-50 C
10 1
10 0
5
5
10 0
10 -2
5 10 -1 5 10 0
5 101 mA 10 2
ÎC
Base-emitter saturation voltage
IC = Æ(VBEsat), hFE = 20
10 -1
0
0.1
0.2
0.3
0.4 V 0.5
VCEsat
Collector cutoff current ICBO = Æ(TA)
VCBO = 30 V
10 2
mA
ÎC
10 1
5
100 C
25 C
-50 C
EHP00379
10 4
nA
Î CB0
10 3
5
10 2
5
10 1
10 0
5
5
10 0
5
10 -1
0
0.2 0.4 0.6 0.8
V 1.2
V BEsat
10 -1
0
EHP00381
max
typ
50
100 C 150
TA
5
2011-09-19
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