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BC857BE6327 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – PNP Silicon AF Transistor
◁
BC857...-BC860...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
fT
- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
Ccb
Ceb
h11e
-
1.5
- pF
-
8
-
kΩ
-
2.7
-
-
4.5
-
-
8.7
-
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h12e
10-4
-
1.5
-
-
2
-
-
3
-
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h21e
-
-
200
-
-
330
-
-
600
-
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h22e
µS
-
18
-
-
30
-
-
60
-
Noise figure
F
-
1
4 dB
IC = 0.2 mA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, BC859, BC850
Equivalent noise voltage
IC = 200 mA, VCE = 5 V, RS = 2 kΩ,
f = 10...50 Hz, BC860
Vn
-
- 0.11 µV
4
2011-09-19
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