AUIRFSA8409-7P Datasheet, PDF (6/11 Pages) Infineon Technologies AG – New Ultra Low On-Resistance

2.0
ID = 100A
1.6
1.2
TJ = 125°C
0.8
0.4
TJ = 25°C
0.0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 16. Typical On-Resistance vs. Gate Voltage
16
IF = 60A
14 _{VR = 34V}
12 ^{TJ = 25°C}
TJ = 125°C
10
8
6
4
2
0
0
200
400
600
800
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
16
IF = 100A
14 _{VR = 34V}
12 ^{TJ = 25°C}
TJ = 125°C
10
8
6
4
2
0
0
200
400
600
800
diF /dt (A/µs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6
AUIRFSA8409-7P
4.0
3.5
3.0
2.5
2.0
ID = 250µA
1.5 ^{ID = 1.0mA}
ID = 1.0A
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 17. Threshold Voltage vs. Temperature
700
IF = 60A
600 VR = 34V
TJ = 25°C
500 _{TJ = 125°C}
400
300
200
100
0
0
200
400
600
800
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
600
IF = 100A
500 ^{VR = 34V}
TJ = 25°C
400 ^{TJ = 125°C}
300
200
100
0
0
200
400
600
800
diF /dt (A/µs)
Fig. 21 - Typical Stored Charge vs. dif/dt
2016-01-11