AUIRFSA8409-7P Datasheet, PDF (4/11 Pages) Infineon Technologies AG – New Ultra Low On-Resistance

10000
1000
TJ = 175°C
100
10
TJ = 25°C
1
0.1
0.1
VGS = 0V
0.4 0.7 1.0 1.3 1.6 1.9
VSD, Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
600
500
Limited by package
400
300
200
100
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
5 10 15 20 25 30 35 40
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
AUIRFSA8409-7P
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec _100µsec
100
LIMITED BY PACKAGE
10
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
49
Id = 2.0mA
47
45
43
41
39
37
-60 -20 20 60 100 140 180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
3500
3000
2500
TOP
BOTTOM
ID
26A
51A
100A
2000
1500
1000
500
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
2016-01-11