AUIRFSA8409-7P Datasheet, PDF (1/11 Pages) Infineon Technologies AG – New Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRFSA8409-7P
Features
 Advanced Process Technology
 New Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
Applications
 Electric Power Steering (EPS)
 Battery Switch
 Start/Stop Micro Hybrid
 Heavy Loads
 DC-DC Applications
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
0.50m
0.69m
523A
360A
G
Gate
D²PAK-7TP
D
Drain
S
Source
Base Part Number
AUIRFSA8409-7P
Package Type
D²PAK-7TP
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Complete Part Number
AUIRFSA8409-7P
AUIRFSA8409-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
523
370
360
1440*
375
2.5
± 20
-55 to + 175
300
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E_{AS (Thermally Limited)}
E_{AS (Thermally Limited)}
I_AR
E_AR
Single Pulse Avalanche Energy 
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
743
1450
mJ
See Fig. 14, 15, 24a, 24b
A
mJ
1
2016-01-11