AUIRFSA8409-7P Datasheet, PDF (3/11 Pages) Infineon Technologies AG – New Ultra Low On-Resistance

10000
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
0.1
4.5V
 60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
10000
1000
TJ = 175°C
100
TJ = 25°C
10
VDS = 10V
 60µs PULSE WIDTH
1.0
2
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
1000000
100000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
1000
Ciss
Coss
Crss
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
10000
1000
AUIRFSA8409-7P
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
100
10
0.1
 60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
2.0
ID = 100A
VGS = 10V
1.6
1.2
0.8
0.4
-60
-20 20 60 100 140 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance vs. Temperature
14
ID = 100A
12
VDS= 32V
10
VDS= 20V
8
6
4
2
0
0 50 100 150 200 250 300 350 400
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2016-01-11