AUIRF4104 Datasheet, PDF (6/12 Pages) International Rectifier – HEXFET® Power MOSFET

15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
I_AS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
I _AS
Fig 12b. Unclamped Inductive Waveforms
Vds
Id
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
AUIRF4104/S
500
400
ID
TOP
BOTTOM
11A
16A
75A
300
200
100
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
2015-9-30