AUIRF4104 Datasheet, PDF (5/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF4104/S
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
_{J J}
_{1 1}
R_1R1
Ci= iRi
Ci= iRi
R_2R2
_{2 2}
R_3R3
Ri (°C/W)
_{3 3}
_CC
0.371
0.337
0.337
i (sec)
0.000272
0.001375
0.018713
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-9-30