AUIRF4104 Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET® Power MOSFET

5000
4000
3000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRF4104/S
20
ID= 75A
16
VDS= 32V
VDS= 20V
12
8
4
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.2
VGS = 0V
0.6
1.0
1.4
1.8
VSD, Source-toDrain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
1msec
10msec
10
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2015-9-30