AUIRF4104 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
AUIRF4104
AUIRF4104S
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
4.3m
5.5m
120A
75A
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
GDS
TO-220AB
AUIRF4104
G
Gate
D
Drain
S
G
D²Pak
AUIRF4104S
S
Source
Base part number
AUIRF4104
AUIRF4104S
Package Type
TO-220
D²-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF4104
AUIRF4104S
AUIRF4104STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
120
I_D @ T_C = 100°C
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
84
75
A
I_DM
P_D @T_C = 25°C
Pulsed Drain Current 
Maximum Power Dissipation
470
140
W
Linear Derating Factor
0.95
W/°C
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
± 20
V
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
120
220
mJ
Avalanche Current 
See Fig.15,16, 12a, 12b
A
Repetitive Avalanche Energy 
mJ
Operating Junction and
-55 to + 175
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
R_JA
R_JA
Junction-to-Case 
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
0.50
–––
Max.
1.05
–––
62
40
Units
°C/W
1
2015-9-30