AUIRF4104 Datasheet, PDF (3/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF4104/S
1000
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
0.1
4.5V ^{20µs PULSE WIDTH}
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
1000
TJ = 25°C
TJ = 175°C
100
10
VDS = 15V
20µs PULSE WIDTH
1
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
120
100
TJ = 25°C
80
60
TJ = 175°C
40
20
0
0
VDS = 10V
380µs PULSE WIDTH
20
40
60
80
100
ID, Drain-to-Source Current (A)
Fig. 4 Typical Forward Transconductance
vs. Drain Current
2015-9-30