PTFB192503EL Datasheet, PDF (5/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 1990 MHz
21
20
Gain
19
18
17
16
Efficiency
+85° C
+25 ° C
–10° C
15
40
45
50
Output Power (dBm)
60
50
40
30
20
10
0
55
Intermodulation Distortion
vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A,
ƒ₁ = 1990 MHz, ƒ₂ = 1989 MHz
-20
-30
-40
IMD3
-50
IMD5
-60
IMD7
-70
35
40
45
50
55
Output Power, PEP (dBm)
PTFB192503EL
PTFB192503FL
CW Performance
Gain vs. Output Power
V_DD = 30 V, ƒ = 1990 MHz
20
I_DQ = 2.5 A
19
I_DQ = 1.85 A
18
I_DQ = 1.2 A
17
40
45
50
55
Output Power (dBm)
Data Sheet
5 of 15
Rev. 09, 2010-11-09