PTFB192503EL Datasheet, PDF (3/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFB192503EL
PTFB192503FL
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 1.85 A, 3GPP WCDMA,
PAR = 8:1, 10 MHz carrier spacing
BW 3.84 MHz
-25
-30
1990 Lower
1990 Upper
1960 Lower
-35 _{1960 Upper}
1930 Lower
-40 1930 Upper
-45
-50
-55
-60
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
-20
40
-25
IMD Up
35
-30
IMD Low
30
-35
Efficiency
25
-40
20
-45
15
-50
ACPR
10
-55
5
-60
0
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 1990 MHz
20
65
19
Gain
55
18
45
17
35
Efficiency
16
25
15
15
14
5
38 40 42 44 46 48 50 52 54
Output Power (dBm)
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
V_DD = 30 V, I_DQ = 1.85 A, P_OUT = 110 W
60
-5
55
RL
-10
50
-15
45
Efficiency
-20
40
-25
35
-30
IMD3
30
-35
25
-40
20
Gain
-45
15
-50
1890
1920
1950
1980
2010
Frequency (MHz)
Data Sheet
3 of 15
Rev. 09, 2010-11-09