PTFB192503EL Datasheet, PDF (13/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Package Outline Specifications
PTFB192503EL
PTFB192503FL
Package H-33288-6
4X R1.524
[R.060]
45° X 2.032
[45° X .080]
4X 30°
V
4X 1.143
[.045] (4 PLS)
D
2X 5.080
[.200] (2 PLS)
V
4.889±.510
[.192±.020]
S
9.779
9.398 [.385]
CL ^[.370]
19.558±.510
[.770±.020]
2X R1.626
E
[R.064]
G
F
CL
2X 12.700
[.500]
H -33288 - 6_ po _02 -18 - 2010
2X 22.860
[.900]
27.940
[1.100]
22.352±.200
[.880±.008]
4.039
+.2
–. 1
54
27
[.159
+.
–.
01
00
0
5
]
1.575
[.062] (SPH)
1.016
[.040]
CL
34.036
[1.340]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: G = gate, S = source, D = drain, V = V_DD, E, F = N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Data Sheet
13 of 15
Rev. 09, 2010-11-09