PTFB192503EL Datasheet, PDF (14/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-34288-4/2
45° X 2.032
[45° X .080]
22.860
[.900]
2X 30°
V
CL
D
V
PTFB192503EL
PTFB192503FL
2X 5.080
[.200]
2X 1.143
[.045]
4.889±.510
[.192±.020]
CL
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
4X R0.508+-.1.32871
[ ] ^{R.020+-.0.00155}
G
2X 12.700
[.500]
22.352±.200
[.880±.008]
4.039+-.1.22574
[ ] ^{.159+-.0.00150}
1.575
[.062] (SPH)
1.016
[.040]
CL
23.114
[.910]
C 66065-A0003- C743- 01-0027 H- 34288- 4_2 .dwg
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate; V = V_DD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
14 of 15
Rev. 09, 2010-11-09