PTFB192503EL Datasheet, PDF (4/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.85 A,
ƒ₁ = 1990 MHz, ƒ₂ = 1989 MHz
-20
45
-25
40
-30
35
-35
30
-40
25
-45 _Efficiency
20
-50
15
-55
10
-60
IMD 3
5
-65
0
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Two-tone Drive-up
at Selected Frequencies
V_DD = 30 V, I_DQ = 1.85 A, Tone Spacing = 1 MHz
-20
1930 MHz
-30
1960 MHz
1990 MHz
IMD3
-40
-50
-60
35
40
45
50
55
Output Power, PEP (dBm)
PTFB192503EL
PTFB192503FL
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.85 A,
ƒ₁ = 1990 MHz, ƒ₂ = 1989 MHz
20
50
19
Gain
40
18
30
17
20
Efficiency
16
10
15
0
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Two-tone Voltage Sweep
I_DQ = 1.85 A, ƒ₁ = 1990 MHz, ƒ₂ = 1989 MHz
Output Power = 53.3 dBm
60
-15
50
-20
Efficiency
40
-25
30
IMD3
-30
20
Gain
-35
10
-40
22
24
26
28
30
32
34
Supply Voltage (V)
Data Sheet
4 of 15
Rev. 09, 2010-11-09