PTFB090901EA Datasheet, PDF (5/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
at selected frequencies
V_DD = 28 V, I_DQ = 650 mA, 1 MHz tone spacing
-20
-30
-40
-50
-60
33
960 MHz
940 MHz
920 MHz
36 39 42 45 48
Output Power, PEP (dBm)
b090901 gr 10
51
CW Drive-up
(over temperature)
V_DD = 28 V, I_DQ = 650 mA,
ƒ = 960 MHz
23
70
22 _Gain
60
21
50
20
40
19
30
18
+25ºC
20
17
Efficiency
+85°C
–30ºC
10
16
b090901 gr 12
0
34 36 38 40 42 44 46 48 50
Output Power, Avg. (dBm)
PTFB090901EA
PTFB090901FA
Two-tone Intermodulation Distortion
vs. Output Power
V_DD = 28 V, I_DQ = 650 mA,
ƒ₁ = 960 MHz, ƒ₂ = 959 MHz
-20
3rd Order
-30
5th
-40
7th
-50
-60
-70
33
b090901 gr 11
36 39 42 45 48 51
Output Power, PEP (dBm)
CW Drive-up
V_DD = 28 V, ƒ = 960 MHz
23
22 ^{IDQ = 980 mA}
21
I_DQ = 650 mA
20
19
I_DQ = 330 mA
18
34 36 38 40 42 44 46
Output Power, Avg. (dBm)
b090901 gr 13
48 50
Data Sheet
5 of 14
Rev. 04, 2012-02-23