PTFB090901EA Datasheet, PDF (12/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz

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Package Outline Specifications
Package H-36265-2
PTFB090901EA
PTFB090901FA
45° X 2. 03
[.0 8 0]
FLANGE
9 .7 8
[.3 8 5]
3 .0 5
[.1 2 0]
CL
2X R1.52
[R. 060]
4X R0.63
[R. 025] MAX
SPH 1.57
[. 062]
1 .0 2
[.0 4 0]
2X 7.11
[.2 8 0]
D
6. ALL FOUR
COR NER S
2.66±. 51
[. 105±.020]
S
LID
10.16±. 25
[. 400±. 010]
1 5.4 9 ± .5 1
[. 610±.020]
G
CL
1 5.2 3
[.6 0 0]
1 0.1 6 ± .2 5
[. 400±.010]
2 0.3 1
[.8 0 0]
4X R1.52
[R .0 6 0]
h - 36265 - 2_ po _09 - 08 - 2011
3.6 1 ± .3 8
[.1 4 2± .0 1 5]
6.
Data Sheet
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain, S – source, G – gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Exposed metal plane on top and bottom of ceramic insulator.
7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
12 of 14
Rev. 04, 2012-02-23