PTFB090901EA Datasheet, PDF (13/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz

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Package Outline Specifications (cont.)
Package H-37265-2
PTFB090901EA
PTFB090901FA
45° X 2.03
[.080]
FLANGE
10.16
CL
[.400]
2X 7.11
[.280]
D
6. ALL FOUR
CORNERS
2.66±.51
[.105±.020]
LID
10.16±.25
[.400±.010]
15.49±.51
[.610±.020]
4X R0.63
[R.025] MAX
G
H- 37265 - 2_po _ 02- 18 - 2010
CL
SPH 1.57
[.062]
10.16±.25
[.400±.010]
3.61±.38
[.142±.015]
1.02
[.040]
S
10.16
[.400]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain, S – source, G – gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Exposed metal plane on top of ceramic insulator.
7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
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http://www.infineon.com/rfpower
Data Sheet
13 of 14
Rev. 04, 2012-02-23