PTFB090901EA Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz

PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Target RF Characteristics (cont.)
Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 650 mA, P_OUT = 70 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
η_D
IMD
—
19.5
—
dB
—
48
—
%
—
–30
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-source Breakdown Voltage
V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
—
V
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1.0
µA
On-state Resistance
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
I_DSS
R_DS(on)
—
—
10.0
µA
—
0.123
—
Ω
Operating Gate Voltage
V_DS = 28 V, I_DQ = 650 mA
V_GS
—
3.8
—
V
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
1.0
µA
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 85 W CW)
Symbol
V_DSS
V_GS
T_J
T_STG
R_θJC
Value
65
–6 to +10
200
–40 to +150
0.73
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB090901EA V1
PTFB090901EA V1 R250
PTFB090901FA V1
PTFB090901FA V1 R250
Order Code
PTFB090901EAV1XWSA1
PTFB090901EAV1R250XTMA1
PTFB090901FAV1XWSA1
PTFB090901FAV1R250XTMA1
Package
H-36265-2
H-36265-2
H-37265-2
H-37265-6/2
Package Description
Ceramic open-cavity, bolt-down
Ceramic open-cavity, bolt-down
Ceramic open-cavity, earless
Ceramic open-cavity, earless
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 04, 2012-02-23