PTFB090901EA Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFB090901EA
PTFB090901FA
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-15
60
-20
Efficiency
50
-25
40
IMD Up
-30
30
IMD Low
-35
20
-40
-45
31
10
ACPR
0
b090901 gr 3
34 37 40 43 46 49
Output Power, Avg. (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 650 mA,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.84 MHz BW
-20
IM3 Low
-25
IM3 Up
-30
960 MHz
-35
940 MHz
920 MHz
-40
-45
31
33 35 37 39 41 43
Output Power, Avg. (dBm)
b090901 gr 2
45 47
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, TM1 w/64 DPCH,
43% clipping, PAR = 7.5 dB, 3.84 MHz BW
0
60
-10
Efficiency
50
-20
40
ACPR Low
-30
30
ACPR Up
-40
20
-50
10
-60
32
35 38 41 44 47
Output Power, Avg. (dBm)
b090901 gr 4
0
50
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, TM1 w/64 DPCH,
100% clipping, PAR = 10 dB, 3.84 MHz BW
0
-10
-20
-30
-40
-50
-60
32
60
Efficiency
50
40
ACPU
30
20
ACPL
35 38 41 44 47
Output Power, Avg. (dBm)
10
b090901 gr 5
0
50
Data Sheet
3 of 14
Rev. 04, 2012-02-23