PTFB082817FH Datasheet, PDF (5/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.15 A, ƒ = 821 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
26
50
22
Gain
30
18
10
Efficiency
14
-10
10
PARC @ .01% CCDF
-30
6
2
36
ACP
38 40 42 44 46 48 50
Average Output Power (dBm)
-50
-70
52
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.15 A, ƒ = 791 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
24
60
Gain
20
40
16
20
Efficiency
12
0
PARC @ .01% CCDF
8
-20
4
0
36
ACP
38 40 42 44 46 48 50 52
Average Output Power (dBm)
-40
-60
54
PTFB082817FH
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.15 A, ƒ = 806 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
26
50
22
Gain
30
18
10
Efficiency
14
-10
10
PARC @ .01% CCDF
-30
6
-50
ACP
2
-70
36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.15 A, ƒ = 821 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 43%
clipping, PAR = 7.5:1 dB, 3.84 MHz BW
-20
Efficiency
-30
-40
ACPR Low
-50
ACPR Up
-60
36
38 40 42 44 46 48 50
Average Output Power (dBm)
45
40
35
30
25
20
15
10
5
0
52
Data Sheet
5 of 13
Rev. 02, 2010-12-13