PTFB082817FH Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz

PTFB082817FH
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.15 A, 3GPP WCDMA,
PAR=8:1, 10 MHz carrier spacing,
BW 3.84 MHz
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.15 A, ƒ = 821 MHz,
3GPP WCDMA signal, PAR = 8:1 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-25
ƒ = 821 Lower
-30
ƒ = 821 Upper
ƒ = 806 Lower
ƒ = 806 Upper
-35
ƒ = 791 Lower
ƒ = 791 Upper
-40
-45
-50
-55
34 36 38 40 42 44 46 48 50
Output Power avg. (dBm)
20
40
Gain
35
19
30
25
18
20
15
17
10
Efficiency
5
16
0
34 36 38 40 42 44 46 48 50
Average Output Power (dBm)
Two-tone Broadband Performance
V_DD = 30 V, I_DQ = 2.15 A, P_OUT = 51.8 dBm
60
Return Loss
50
Efficiency
40
30
IMD3
20
10
776
Gain
791
806
821
Frequency (MHz)
0
-10
-20
-30
-40
-50
836
Two-tone Drive-up at
Selected Frequencies
V_DD = 30 V, I_DQ = 2.15 A, tone spacing = 1 MHz
-20
ƒ = 821 MHz
ƒ = 806 MHz
-30
ƒ = 791 MHz
-40
-50
-60
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Data Sheet
3 of 13
Rev. 02, 2010-12-13