PTFB082817FH Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz

PTFB082817FH
Confidential, Limited Internal Distribution
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 2.15 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.5
—
Typ
—
—
—
0.05
3.9
—
Max
—
1.0
10.0
—
4.5
1.0
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 250 W CW)
Symbol Value
V_DSS
65
V_GS –6 to +10
T_J
200
T_STG –40 to +150
R_qJC
0.215
Ordering Information
Type and Version
PTFB082817FH V1
PTFB082817FH V1 R250
Package Outline
H-34288-4/2
H-34288-4/2
Package Description
Ceramic open-cavity, earless flange
Ceramic open-cavity, earless flange
Shipping
Tray
Tape & Reel
Unit
V
µA
µA
W
V
µA
Unit
V
V
°C
°C
°C/W
Data Sheet
2 of 13
Rev. 02, 2010-12-13