PTFB082817FH Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz

PTFB082817FH
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
280 W, 30 V, 791 – 821 MHz
Description
The PTFB082817FH is a LDMOS FET intended for use in multi-
standard cellular power amplifier applications. Features include
input and output matching, high gain and thermally-enhanced
package with earless flanges. Manufactured with Infineon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
PTFB082817FH
Package H-34288-4/2
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.15 A, ƒ = 821 MHz,
3GPP WCDMA signal, PAR = 8:1 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-20
40
-25
35
-30
30
-35
Efficiency
25
IMD Low
-40
20
-45
15
-50
ACPR
10
-55
5
IMD Up
-60
0
34 36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
• Typical single-carrier WCDMA performance at
821 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 19 dB
- Efficiency = 35 %
- Adjacent channel power = –35 dBc
• Increased negative gate-source voltage range
for improved performance in Doherty peaking
amplifiers
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 30 V, 280 W
(CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.15 A, P_OUT = 60 W average, ƒ = 821 MHz, 3GPP signal, 10 MHz spacing, channel bandwidth = 3.84 MHz,
peak/average = 8 : 1 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
18.5 19.3
h_D
28
29
IMD
—
–36
Max
—
—
–34
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 02, 2010-12-13