PTFB082817FH Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
V_DD = 30 V, I_DQ = 2.15 A,
ƒ₁ = 821 MHz, ƒ₂ = 820 MHz
-20
-25
-30
-35
3rd Order IMD
-40
-45
-50
-55
Efficiency
-60
-65
39
41 43 45 47 49 51 53
Output Power, PEP (dBm)
45
40
35
30
25
20
15
10
5
0
55
Two-tone Drive-up (over temperature)
(P_OUT - max 3rd order IMD @ -30 dBc)
V_DD = 30 V, I_DQ = 2.15 A,
ƒ₁ = 821 MHz, ƒ₂ = 820 MHz
21
50
20
Gain
40
19
30
18
20
17
16
39
Efficiency
+25°C
+85°C
–30°C
41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
10
0
57
PTFB082817FH
Two-tone Drive-up
V_DD = 30 V, I_DQ = 2.15 A,
ƒ₁ = 821 MHz, ƒ₂ = 820 MHz
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
39
Gain
Efficiency
41 43 45 47 49 51 53
Output Power, PEP (dBm)
50
45
40
35
30
25
20
15
10
5
0
55
Intermodulation Distortion
vs. Output Power
V_DD = 30 V, I_DQ = 2.15 A,
ƒ₁ = 821 MHz, ƒ₂ = 820 MHz
-15
-25
3rd Order
-35
5th
-45
7th
-55
-65
-75
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Data Sheet
4 of 13
Rev. 02, 2010-12-13