PTF180101 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

PTF180101
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, I_DQ = 0.18 A, f₁ = 1990 MHz, f₂ = 1991 MHz
-20
-30
3rd Order
-40
-50
-60 ^5th
-70
7th
-80
30 32 34 36 38 40 42
Output Power, PEP (dBm)
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.04
1.03
0.05 A
0.28 A
1.02
0.51 A
1.01
0.74 A
1.00
0.97 A
1.20 A
0.99
0.98
0.97
0.96
-20
0
20
40 60
80 100
Case Temperature (°C)
Typical Performance, WCDMA Operation
Two–Tone Drive–up
V_DD = 28V, I_DQ = 135 mA, f = 2170 MHz,
tone spacing = 1 MHz
-20
40
-25
Ef f ic iency
35
-30
30
-35
25
-40
20
-45
15
-50
IM3
10
-55
5
-60
0
20
25
30
35
40
45
Output Power (dBm), PEP
Single–Carrier WCDMA Drive–Up
V_DD = 28 V, I_DQ = 135 mA, f = 2170 MHz,
3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67%
clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth
-35
25
-40
20
Ef f icienc y
-45
15
ACPR
-50
10
-55
5
-60
0
17
22
27
32
37
Average Output Power (dBm)
Data Sheet
5
2004-02-03