PTF180101 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

PTF180101
RF Characteristics, WCDMA Operation at T_CASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 135 mA, P_OUT = 1.8 W,
f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF
Characteristic
Adjacent Channel Power Ratio
Gain
Drain Efficiency
Symbol Min Typ
ACPR
—
–45
G_ps
—
18
η_D
—
20
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 135 mA, P_OUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency @ –30 dBc IM3
Intermodulation Distortion
Symbol Min Typ
G_ps
η_D
IMD
—
18
—
37
—
–30
Max
—
—
—
Units
dB
%
dBc
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 A
V_DS = 28 V, I_DQ = 180 mA
V_GS = 10 V, V_DS = 0 V
Symbol Min Typ
V_(BR)DSS
65
—
I_DSS
—
—
R_DS(on)
—
0.83
V_GS
2.5
3.2
I_GSS
—
—
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings at T_CASE = 25°C unless otherwise indicated
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 10 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
58
0.333
–40 to +150
3.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Data Sheet
2
2004-02-03