PTF180101 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Typical Performance (cont.)
Power Gain vs. Output Power
V_DD = 28 V, f = 1990 MHz
21
I_DQ = 0.235 mA
20 _{IDQ = 0.180 mA}
19 ^{IDQ = 0.135 mA}
18
0
1
10
100
Output Power (W)
PTF180101
Broadband Test Fixture Performance
V_DD = 28 V, I_DQ = 0.18 A, P_OUT = 10 W
50
15
Ef f icienc y
40
5
30
-5
Gain
20
-15
10
Return Loss
-25
0
1900
1930
1960
1990
Frequency (MHz)
-35
2020
Broadband Test Fixture Performance
V_DD = 28 V, I_DQ = 0.18 A, P_OUT = 4 W
30
20
25 _Efficiency
10
20 _Gain
0
15
-10
10
-20
Return Loss
5
-30
0
1900
1930
1960
1990
-40
2020
Frequency (MHz)
Output Power vs. Supply Voltage
I_DQ = 0.18 A, f = 1990 MHz
42
41
40
39
38
37
22
24
26
28
30
32
Supply Voltage (V)
Data Sheet
4
2004-02-03