PTF180101 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

PTF180101
LDMOS RF Power Field Effect Transistor
10 W, 1805–1880 MHz, 1930–1990 MHz
10 W, 2110–2170 MHz
Description
Features
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device in- •
tended for EDGE applications in the DCS/PCS band. Full gold metallization
ensures excellent device lifetime and reliability.
EDGE EVM Performance
EVM and Efficiency vs. Output Power
•
V_DD = 28 V, I_DQ = 0.18 A, f = 1989.8 MHz
4
40
Ef f icienc y
•
3
30
2
20
•
1
EVM
•
10
•
•
0
0
25
30
35
40
Output Power (dBm)
ESD: Electrostatic discharge sensitive device — observe handling precautions!
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBc
Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 50%
Integrated ESD protection:
Human Body Model Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
PTF180101S
Package 32259
RF Characteristics, EDGE Operation at T_CASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 4 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol Min Typ
EVM (RMS) —
1.1
ACPR
—
–60
ACPR
—
–70
G_ps
—
19
η_D
—
28
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
Symbol Min Typ
G_ps
η_D
IMD
18
19
30
33
—
–30
Max
—
—
–28
Units
dB
%
dBc
1
2004-02-03