PTF180101 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

PTF180101
Typical Performance measurements taken in broadband test fixture
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 0.18 A, f = 1989.8 MHz
-50
50
400 kHz
-60
40
-70 ^{600 kHz}
30
-80
20
Ef f icienc y
-90
10
-100
0
25
30
35
40
Output Power (dBm)
EVM and Modulation Spectrum Performance
f = 1989.8 MHz, P_OUT = 3.5 W
8
-40
7
400 kHz ^-50
6
-60
600 kHz
5
-70
4 _EVM
-80
3
-90
2
-100
1
-110
0.00 0.05 0.10 0.15 0.20 0.25 0.30
Quiscent Drain Current (A)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 0.18 A, f = 1990 MHz
21
20
Gain
19
18
Ef f icienc y
17
16
29
32
35
38
41
Output Power (dBm)
60
50
40
30
20
10
44
Output Power, Gain & Efficiency (at P-1dB)
vs. Frequency
V_DD = 28 V, I_DQ = 0.18 A
25
70
24
Efficiency ⁶⁰
23
50
22
Output Pow er ⁴⁰
21
30
20
20
19
Gain
18
1900 1920
1940
1960
1980
2000
10
0
2020
Frequency (MHz)
Data Sheet
3
2004-02-03