IDB10S60C Datasheet, PDF (5/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode

9 Typ. C stored energy
E _C=f(V _R)
IDB10S60C
10 Typ. Capacitive charge vs. current slope
Q _C=f(di _F/dt )⁵⁾; T _j=150 °C; I _F≤I _F,max
14
12
10
8
6
4
2
0
0
100 200 300 400 500 600
V _R [V]
25
20
15
10
5
0
100
400
700
di _F/dt [A/µs]
1000
Rev. 2.1
page 5
2009-01-07