English
Language : 

IDB10S60C Datasheet, PDF (4/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode
◁
5 Typ. forward power dissipation vs.
average forward current
P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
50
0.1
0.5
40
1
0.2
30
IDB10S60C
6 Typ. reverse current vs. reverse voltage
I R=f(V R)
parameter: T j
102
101
100
20
10-1
175 °C
100 °C
150 °C
10
10-2
25 °C
-55 °C
0
10-3
0
5
10
15
20
25
100
200
300
400
500
600
I F(AV) [A]
V R [V]
7 Transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
8 Typ. capacitance vs. reverse voltage
C =f(V R); T C=25 °C, f =1 MHz
600
500
100
0.5
400
0.2
300
0.1
10-1
0.02
0.01
single pulse
200
100
10-2
10-5
10-4
10-3
10-2
10-1
100
t P [s]
0
10-1
Rev. 2.1
page 4
100
101
102
V R [V]
103
2009-01-07
 ▷