IDB10S60C Datasheet, PDF (2/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode

IDB10S60C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC
-
Thermal resistance,
junction - ambient
SMD version, device
R _thJA on PCB, minimal
-
Footprint
SMD version, device
on PCB, 6 cm² cooling -
area³⁾
Soldering temperature,
reflowsoldering @ 10sec.
T _sold
reflow MSL1
-
Electrical characteristics, at T _j=25 °C, unless otherwise specified
-
1.8 K/W
-
62
35
-
-
260 °C
Static characteristics
DC blocking voltage
Diode forward voltage
V _DC
I _R=0.14 mA
V_F
I _F=10 A, T _j=25 °C
I _F=10 A, T _j=150 °C
600
-
-
1.5
-
1.7
-V
1.7
2.1
Reverse current
I_R
V _R=600 V, T _j=25 °C
-
1.4
140 µA
V _R=600 V, T _j=150 °C
-
5
1400
AC characteristics
Total capacitive charge
Switching time⁴⁾
Total capacitance
Q_c
V _R=400 V, I _F≤I _F,max,
-
di _F/dt =200 A/µs,
t_c
T _j=150 °C
-
24
- nC
-
<10 ns
C
V _R=1 V, f =1 MHz
-
480
- pF
V _R=300 V, f =1 MHz
-
60
-
V _R=600 V, f =1 MHz
-
60
-
1) _{J-STD20 and JESD22}
2) _{All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.}
3) _{Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm}2 _{(one layer, 70µm thick) copper area for drain}
connection. PCB is vertikal with out blown air.
4) _{tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and}
di/dt), different from t_rr, which is dependent on T_j, I_LOAD, di/dt. No reverse recovery time constant t_rr due to
absence of minority carrier injection.
5) _{Only capacative charge occuring, guaranteed by design.}
Rev. 2.1
page 2
2009-01-07