IDB10S60C Datasheet, PDF (1/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode

2^nd Generation thinQ!^TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHs compliant
• Qualified according to JEDEC¹⁾ for target applications
• Breakdown voltage tested at 5mA²⁾
Product Summary
V _DC
Q_c
I_F
D²PAK
IDB10S60C
600 V
24 nC
10 A
thinQ! 2G Diode designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
IDB10S60C
Package
D²PAK
Marking
D10S60C
Pin 2
C
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous forward current
RMS forward current
I_F
I _F,RMS
T _C<135 °C
f =50 Hz
Surge non-repetitive forward current,
sine halfwave
I _F,SM
T _C=25 °C, t _p=10 ms
Repetitive peak forward current
I _F,RM
T _j=150 °C,
T _C=100 °C, D =0.1
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
Diode ruggedness dv/dt
Power dissipation
Operating and storage temperature
I _F,max T _C=25 °C, t _p=10 µs
∫i ²dt
T _C=25 °C, t _p=10 ms
V _RRM
dv/ dt V_R=0…480V
P _tot
T _C=25 °C
T _j, T _stg
Pin 3
A
Value
10
15
76
32
350
29
600
50
83
-55 ... 175
Rev. 2.1
page 1
Unit
A
A²s
V
V/ns
W
°C
2009-01-07