IDB10S60C Datasheet, PDF (3/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode

1 Power dissipation
P _tot=f(T _C)
100
2 Diode forward current
I _F=f(T _C); T _j≤175 °C
25
IDB10S60C
80
20
60
15
40
10
20
5
0
25 50 75 100 125 150 175 200
T _C [°C]
0
25
50
75 100 125 150 175
T _C [°C]
3 Typ. forward characteristic
I _F=f(V _F); t _p=400 µs
parameter: T _j
30
100 °C
175°C
4 Typ. forward characteristic in surge current
mode
I _F=f(V _F); t _p=400 µs; parameter: T _j
120
-55 °C
25 °C
150 °C
100
20
80
175°C
60
25 °C
10
40
100 °C
20
150 °C
0
0
Rev. 2.1
-55 °C
1
2
3
V _F [V]
0
4
0
page 3
2
4
6
V _F [V]
8
2009-01-07