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| BCM856S_07 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – PNP Silicon AF Transistor Array | |||
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BCM856S
Collector current IC = Æ(VBE)
VCE = Parameter
Collector cutoff current ICBO = Æ(TA)
VCBO = 30 V
10 -1
A
10 -2
5V
5V
5V
1V
1V
1V
10 -3
TA=100°C
TA=25°C
10 -4
TA=-50°C
10 -5
10 -6
0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1
VBE
Transition frequency fT = Æ(IC)
VCE = parameter in V, f = 2 GHz
10 4
nA
Î CB0
10 3
5
10 2
5
10 1
5
max
EHP00381
typ
10 0
5
10 -1
0
50
100 C 150
TA
Collector-base capacitance Ccb = Æ(VCB)
Emitter-base capacitance Ceb = Æ(VEB)
10 3
MHz
fT 5
EHP00378
10 2
5
10 1
10 -1
5 10 0
5 101
mA 10 2
ÎC
12
pF
10
9
8
7
6
5
4
3
2
1
0
0
CEB
CCB
4
8
12
16 V 22
VCB(VEB)
5
2007-04-27
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