BCM856S_07 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – PNP Silicon AF Transistor Array

BCM856S
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
140
Unit
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 10 mA, I_B = 0 A
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0 A
Collector-emitter breakdown voltage
I_C = 10 µA, V_BE = 0 A
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0 A
Collector-base cutoff current
V_CB = 30 V, I_E = 0 A
V_CB = 30 V, I_E = 0 A, T_A = 150 °C
DC current gain-²⁾
I_C = 10 µA, V_CE = 5 V
I_C = 2 mA, V_CE = 5 V
Collector-emitter saturation voltage²⁾
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base emitter saturation voltage²⁾
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base-emitter voltage-²⁾
I_C = 2 mA, V_CE = 5 V
I_C = 10 mA, V_CE = 5 V
Matching
I_B = 1 µA, V_CE1 = V_CE2 = 1.0V
I_B = 100 µA, V_CE1 = V_CE2 = 1.0V
V_(BR)CEO 65
-
-V
V_(BR)CBO 80
-
-
V_(BR)CES 80
-
-
V_(BR)EBO 5
-
-
I_CBO
-
-
h_FE
-
200
V_CEsat
-
-
V_BEsat
-
-
V_BE(ON)
600
-
∆I_C
-10
-10
µA
- 0.015
-
5
-
250 -
290 450
mV
90 300
250 650
700 -
850 -
650 750
- 820
%
-
10
-
10
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2_{Puls test: t < 300µs; D < 2%}
2
2007-04-27