BCM856S_07 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – PNP Silicon AF Transistor Array

BCM856S
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Transition frequency
I_C = 20 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Short-circuit input impedance
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratio
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
Open-circuit output admittance
I_C = 2 mA, V_CE = 5 V, f = 1 kHz
Noise figure
f_T
C_cb
C_eb
h_11e
h_12e
h_21e
h_22e
F
-
250
- MHz
-
3
- pF
-
8
-
-
4.5
- kΩ
-
2
- 10^-4
- 330 - -
-
30
- µS
-
-
10 dB
I_C = 200 µA, V_CE = 5 V, f = 1 kHz,
∆ f = 200 Hz, R_S = 2 kΩ
3
2007-04-27