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BCM856S_07 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – PNP Silicon AF Transistor Array
PNP Silicon AF Transistor Array
• Precision matched transistor pair: ∆IC ≤ 10%
• For current mirror applications
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated Transistors
• Complementary type: BCM846S
• BC856S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BCM856S
4
5
6
3
2
1
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07175
Type
BCM856S
Marking
Pin Configuration
Package
3Ms
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation-
TS = 115 °C
VCEO
VCES
VCBO
VEBO
IC
ICM
Ptot
Junction temperature
Tj
Storage temperature
Tstg
1Pb-containing package may be available upon special request
Value
65
80
80
5
100
200
250
150
-65 ... 150
Unit
V
mA
mW
°C
1
2007-04-27