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BCM856S_07 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – PNP Silicon AF Transistor Array
BCM856S
DC current gain hFE = ƒ(IC)
VCE = 5V
10 3
h FE 5 100 C
25 C
102 -50C
5
EHP00382
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 20
10 2
mA
ΙC
10 1
5
EHP00380
100 C
25 C
-50 C
10 1
10 0
5
5
10 0
10 -2
5 10 -1 5 10 0
5 101 mA 10 2
ΙC
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 20
10 -1
0
0.1 0.2 0.3 0.4 V 0.5
VCEsat
Output characteristics IC = ƒ(VCE),
IB = parameter
10 2
mA
ΙC
10 1
5
100 C
25 C
-50 C
EHP00379
10 0
5
10 -1
0
0.2 0.4 0.6 0.8
V 1.2
V BEsat
15
mA
12
IB = 40µA
11
IB = 36µA
10
IB =32µA
9
IB = 28µA
8
IB = 24µA
7
IB = 20µA
6
5
IB = 16µA
4
IB = 12µA
3
IB = 8µA
2
IB = 4µA
1
0
0
1
2
3
V
5
VCE
4
2007-04-27