PTFB211501EF Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (cont.)
Two-tone Drive-up
at Selected Frequencies
V_DD = 30 V, I_DQ = 1.20 A, tone spacing = 1 MHz
-20
2170 MHz
-30
2140 MHz
2110 MHz
-40
-50
-60
41
43
45
47
49
51
53
Output Power, PEP (dBm)
PTFB211501E
PTFB211501F
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 2170 MHz
20
65
19
55
18
45
Gain
17
35
16
Efficiency
25
15
41
43
45
47
49
51
Output Power (dBm)
15
53
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 2170 MHz
19
60
18
50
17
Gain
40
16
30
15
Efficiency
+25°C
+85°C
20
–10°C
14
10
42 43 44 45 46 47 48 49 50 51 52
Output Power (dBm)
CW Performance
Gain vs. Output Power
V_DD = 30 V, ƒ = 2170 MHz
19
I_DQ = 1.40 A
18
I_DQ = 1.20 A
17
I_DQ = 0.80 A
16
41
43
45
47
49
51
53
Output Power (dBm)
Data Sheet
4 of 13
Rev. 03.1, 2016-06-14