PTFB211501EF Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB211501E
PTFB211501F
RF Characteristics (cont.)
Two-tone Measurement (not subject to production test - verified by design / characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.2 A, P_OUT = 140 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
G_ps
—
18
—
dB
Drain Efficiency
η_D
—
40
—
%
Intermodulation Distortion
IMD
—
–30
—
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 1.2 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
1.6
—
Typ
—
—
—
0.08
2.1
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 150 W CW)
Symbol
V_DSS
V_GS
T_J
T_STG
R_θJC
Value
65
–6 to +10
200
–40 to +150
0.29
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version Ordering Code
Package Description
PTFB211501E V1 R0 PTFB211501EV1R0XTMA1 H-36248-2, bolt-down
PTFB211501E V1 R250 PTFB211501EV1R250XTMA1 H-36248-2, bolt-down
PTFB211501F V1 R0 PTFB211501FV1R0XTMA1
H-37248-2, earless flange
PTFB211501F V1 R250 PTFB211501FV1R250XTMA1 H-37248-2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50pcs
Tape & Reel, 250 pcs
*See Infineon distributor for future availability.
Data Sheet
2 of 13
Rev. 03.1, 2016-06-14