PTFB211501EF Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB211501E
PTFB211501F
Typical Performance (data taken in production test fixture)
Single-carrier WCDMA, 3GPP Broadband
V_DD = 30 V, I_DQ = 1.20 A, P_OUT = 40 W
50
-10
45
IRL
-15
40
-20
35
-25
30 ^Efficiency
-30
25
ACP
20
-35
Gain
-40
15
2080
2100
2120 2140 2160
Frequency (MHz)
2180
-45
2200
Two-tone Broadband
V_DD = 30 V, I_DQ = 1.20 A, P_OUT = 63 W
55
-10
50
IRL
-15
45
-20
Efficiency
40
-25
35
IMD3 ^-30
30
-35
25
-40
20
Gain
-45
15
-50
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.20 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
19
50
18
17
16
15
40
Gain
Efficiency
42 44 46 48 50 52
Output Power, PEP (dBm)
40
30
20
10
0
54
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.20 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
-10
55
-20
Efficiency
45
-30
35
-40
IMD3
25
-50
15
-60
5
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
Data Sheet
3 of 13
Rev. 03.1, 2016-06-14