PTFB211501EF Datasheet, PDF (11/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB211501E
PTFB211501F
Package Outline Specifications
Package H-36248-2
45° X 2.720
CL
[45° X .107]
D
[ ] FLANGE 9.779
[.385]
19.431±0.510
LID 9.398+-00.1.15000
.370+-00.0.00064
[.765±0.020]
1.016
[.040]
G
2X 12.700
[.500]
27.940
[1.100]
19.812±0.200
[.780±0.008]
0.0381 [.0015] -A-
CL
34.036
[1.340]
4.826±0.510
[.190±0.020]
S
CL
2X R1.626
[R.064]
4X R1.524
[R.060]
C66065-A2322-C001-01-0027_h-36248-2_11-11-09
SPH 1.575
[.062]
3.632±0.380
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; S – source; G – gate.
5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
Data Sheet
11 of 13
Rev. 03.1, 2016-06-14