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PTFB211501EF Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs | |||
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PTFB211501E
PTFB211501F
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 â 2170 MHz
Description
The PTFB211501E and PTFB211501F are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 â 2170 frequency band. Features include
I/O matching, high gain, and thermally-enhanced ceramic open-cavity
packages with slotted and earless flanges.
PTFB211501E
Package H-36248-2
PTFB211501F
Package H-37248-2
Single-carrier WCDMA Drive Up
VDD = 30 V, IDQ = 1.20 A, Æ = 2170 MHz
3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-25
60
-30
50
-35
Efficiency
40
-40
30
-45 ACP Low
20
-50
10
ACP Up
-55
0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
⢠Broadband internal matching
⢠Typical single-carrier WCDMA performance at
2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel
bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
CCDF
- Average output power = 40 W
- Linear Gain = 18 dB
- Efficiency = 32%
- Adjacent channel power = â34 dBc
⢠Typical CW performance, 2170 MHz, 30 V
- Output power at Pâ1dB = 150 W
- Efficiency = 55%
⢠Integrated ESD protection: Human Body Model,
Class 2 (minimum)
⢠Capable of handling 10:1 VSWR @ 30 V,
150 W (CW) output power
⢠Pb-Free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 40 W AVG, Æ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB
@ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Gps
17
18
â
dB
Drain Efficiency
ηD
27
32
â
%
Intermodulation Distortion
IMD
â
â34
â32
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive deviceâobserve handling precautions!
Data Sheet
1 of 13
Rev. 03.1, 2016-06-14
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